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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6216-B Issued Date : 1992.09.22 Revised Date : 2000.09.01 Page No. : 1/3 H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4126 is designed for general purpose switching and amplifier applications. Features * Complementary to H2N4124 * High Power PT : 625mW at 25C * High DC Current Gain hFE : 120-360 at IC=2mA Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... -25 V VCEO Collector to Emitter Voltage .................................................................................... -25 V VEBO Emitter to Base Voltage ............................................................................................ -4 V IC Collector Current ...................................................................................................... -200 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -25 -25 -4 120 60 250 Typ. Max. -50 -50 -400 -950 360 4.5 Unit V V V nA nA mV mV Test Conditions IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-20V, IE=0 VBE=-3V, IC=0 IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-1V, IC=-2mA VCE=-1V, IC=-50mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz *Pulse Test : Pulse Width 380us, Duty Cycle2% MHz pF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 Spec. No. : HE6216-B Issued Date : 1992.09.22 Revised Date : 2000.09.01 Page No. : 2/3 Saturation Voltage & Collector Current hFE @ VCE=1V 100 Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB hFE 10 100 VCE(sat) @ IC=10IB 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 100 Capacitance & Reverse-Biased Voltage Capacitance (pF) On Voltage (mV) 10 Cob 1000 VBE(on) @ VCE=1V 1 100 0.1 1 10 100 1000 0.1 0.1 1 10 100 Collector Current (mA) Reverse-Biased Voltage (V) Safe Operating Area 10000 PT=1ms 700 600 PD-Ta Collector Current-IC (mA) 1000 PT=1s 100 Power Dissipation-PD(mW) PT=100ms 500 400 300 200 100 10 1 1 10 100 0 0 20 40 60 80 100 o 120 140 160 Forward Voltage-VCE (V) Ambient Temperature-Ta( C) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6216-B Issued Date : 1992.09.22 Revised Date : 2000.09.01 Page No. : 3/3 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Emitter 2.Base 3.Collector 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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